4A N-Channel Power MOSFET
TO-220AB 4N60 Mechanical Data Case : Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : As marked
TO-220AB 4N60 Mechanical Data Case : Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : As marked
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The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Unisonic Technologies is a Taiwanese semiconductor company that specializes in the design, manufacture, and sales of power management and analog integrated circuits (ICs). The
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4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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4N60 MOSFET PDF Datasheet: N-Ch/600V/4A. View the complete specification, pin configuration and find equivalents or replacement transistors.
SFET DESCRIPTION The UTC 4N60-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate
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4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead (Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS (on),max superior switching performance and high avalance Q 12.8 nC g,typ energy.